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WIN Semiconductors Corp. Adds High Voltage GaAs Passive Process for Cost Effective GaN Hybrid Power Amplifiers
Date:2016.05.24

IP3M process enables cost effective input and output matching networks for 50-volt operation, and provides high quality factor circuit elements combined with humidity ruggedness required for use in low-cost plastic packages.

Taoyuan, Taiwan – May 24, 2016: WIN Semiconductors Corp. (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, today announced the expansion of its market leading technology portfolio with the addition of a high voltage integrated passive device process. The IP3M process is a flexible passive circuit platform that provides three metal interconnect layers and high breakdown voltage capacitors needed to support reliable operation at 50 volts. These high quality passive elements are formed in a humidity robust architecture utilizing silicon nitride and multilayer low-k dielectric films. This process approach provides excellent resistance to humidity ingression at the high bias voltages used in GaN hybrid power amplifiers. The moisture resistance provided by IP3M enables passive networks compatible with 50-volt bias in non-hermetic plastic packages.

The IP3M technology is fabricated on 150mm GaAs substrates in WIN Semiconductors’ state-of-the-art production facilities located in Taoyuan City, Taiwan. This process provides up to 7µm thick Au metallization with through-wafer vias for flexible ground connections. Additionally, IP3M allows layout flexibility for customers to optimize inductor quality factor, power combining and bond-pad arrangement to match a wide array of power cells in a multitude of package styles and environments.

WIN Semiconductors Corp. at 2016 International Microwave Symposium

WIN Semiconductors Corp. will be showcasing its RF and mm-Wave solutions in booth 950 at the 2015 IEEE International Microwave Symposium in San Francisco, CA being held May 23-27.


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